Semiconductor Device Structures

ABSTRACT

In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.

PRIORITY DATA

This is a divisional application of U.S. patent application Ser. No.16/009,519, filed Jun. 15, 2018, entitled “SEMICONDUCTOR DEVICESTRUCTURES,” the entire disclosure of which is incorporated herein byreference.

BACKGROUND

The semiconductor industry has experienced rapid growth. Technologicaladvances in semiconductor materials and design have produced generationsof semiconductor devices where each generation has smaller and morecomplex circuits than the previous generation. In the course ofintegrated circuit (IC) evolution, functional density (i.e., the numberof interconnected devices per chip area) has generally increased whilegeometry size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling downprocess generally provides benefits by increasing production efficiencyand lowering associated costs. But these advances have also increasedthe complexity of processing and manufacturing semiconductor devices.

For example, as device geometry shrinks, parasitic capacitance increasesbetween interconnects such as source/drain (S/D) contact plugs andnearby gates. The increased parasitic capacitance degrades deviceperformance. To lower parasitic capacitance, insulating materials with arelatively low dielectric constant (k), such as low-k dielectrics andair gaps, have been used between S/D features and nearby gates. Butthese materials have proven difficult to fabricate. In some instances,low-k dielectric materials are brittle, unstable, difficult to deposit,or sensitive to processes such as etching, annealing, and polishing, andair gap formations are difficult to control. For these reasons andothers, it is desirable to improve the fabrication techniques ofdielectrics between interconnects in order to reduce the parasiticcapacitance while maintaining a high overall transistor density in IC.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is a flow chart showing a first method for fabricating asemiconductor device, according to various embodiments of the presentdisclosure.

FIGS. 2A, 2B, 2C, 2D, 2E, and 2F are schematic diagrams illustratingcross-sectional views of a semiconductor device during various stages ofthe method shown in FIG. 1.

FIGS. 3A, 3B, and 3C are schematic diagrams illustrating cross-sectionalviews of a semiconductor device during more stages of the method shownin FIG. 1.

FIG. 4 is a flow chart showing a second method for fabricating asemiconductor device, according to various embodiments of the presentdisclosure.

FIGS. 5A, 5B, 5C, 5D, and 5E are schematic diagrams illustratingcross-sectional views of a semiconductor device during various stages ofthe method shown in FIG. 4.

FIG. 6 is a schematic diagram illustrating a partial plan view of asemiconductor device, according to various embodiments of the presentdisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the sake of simplicity andclarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed. Moreover, variousfeatures may be arbitrarily drawn in different scales for the sake ofsimplicity and clarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,elements described as being “below” or “beneath” other elements orfeatures would then be oriented “above” the other elements or features.Thus, the exemplary term “below” can encompass both an orientation ofabove and below. The apparatus may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly.

The present disclosure is generally related to semiconductor devices andfabrication methods thereof, and more particularly to the formation ofair gaps between metal lines such as contact plugs and neighboringgates. As FinFET technologies progress towards smaller technology nodes(such as 16 nm, 10 nm, 7 nm, 5 nm, and below), decreasing fin pitch isplacing significant constraints on materials that can be used betweengate stacks and neighboring contact plugs that are connected to S/Dfeatures. To minimize parasitic capacitance between gate stacks andcontact plugs, an air gap can help because air has lower dielectricconstant (k=1) than other dielectric materials. But, when air gaps areformed before contact plugs, they tend to be near the gate stacks andfar away from contact plugs. Further, the air gaps are prone to bedamaged by the subsequent formation of the contact plugs. For example,when forming a contact plug, overlay shift may occur if a mask forpatterning the contact plug is not aligned perfectly with lower layercomponents. With overlay shift, the position of a contact hole may bevery close to a neighboring gate stack. In this case, etching thecontact hole would expose an already-sealed air gap, and the exposed airgap may be partially or completely filled by the contact plug. The airgap then loses its purpose of reducing parasitic capacitance.

The present disclosure avoids these issues by forming air gaps after(not before or simultaneous with) the formation of contact plugs. Forexample, air gaps are formed by first depositing silicon nitridefeatures in a contact hole, then forming a contact plug sandwichedbetween the silicon nitride features, and then selectively etching awaythe silicon nitride features. Selective removal of the silicon nitridefeatures is realized by etch selectivity of silicon nitride featurematerial(s) compared to other surrounding materials. The post-plugformation of air gaps disclosed herein leads to air gaps that extendabove top surfaces of neighboring gate stacks. As a result, parasiticcapacitance between gate stacks and contact plugs can be effectivelyreduced. Further, the disclosed air gaps directly touch a contact plugabove an S/D feature, thereby exposing the sidewall of the contact plugto air. Such air exposure helps heat dissipation when the contact plugis conducting an electric current.

The post-plug formation of air gaps disclosed herein may be realizedusing various fabrication approaches. FIG. 1 illustrates a first method10 for fabricating a semiconductor device (or device structure) 100according to various aspects of the present disclosure. Method 10 ismerely an example, and is not intended to limit the present disclosurebeyond what is explicitly recited in the claims. Additional operationscan be provided before, during, and after method 10, and some operationsdescribed can be replaced, eliminated, or moved around for additionalembodiments of method 10. In the following discussion, method 10 isdescribed with reference to FIGS. 2A-2F and 3A-3C, which are fragmentarydiagrammatic cross-sectional views of a semiconductor device 100, inportion or entirety, at various fabrication stages according to variousembodiments of the present disclosure.

Semiconductor device 100 may be or include a FinFET device (a fin-basedtransistor), which can be included in a microprocessor, memory cell,and/or other IC devices. Semiconductor device 100 may be an intermediatedevice fabricated during processing of an IC chip, a system on chip(SoC), or portion thereof, that includes various passive and activemicroelectronic devices such as resistors, capacitors, inductors,diodes, p-type field effect transistors (PFETs), n-type field effecttransistors (NFETs), metal-oxide semiconductor field effect transistors(MOSFETs), complementary metal-oxide semiconductor (CMOSs) transistors,bipolar transistors, high voltage transistors, high frequencytransistors, other suitable components, or combinations thereof. FIGS.2A-2F have been simplified for the sake of clarity to better understandthe inventive concepts of the present disclosure. Additional featurescan be added in semiconductor device 100, and some of the featuresdescribed below can be replaced, modified, or eliminated in otherembodiments of semiconductor device 100.

At operation 12, method 10 provides, or is provided with, a startingsemiconductor device 100. As shown in FIG. 2A, the startingsemiconductor device 100 includes components such as a substrate 102,source or drain (S/D) features 106 a and 106 b, an inter-layerdielectric (ILD) layer 110, gate spacers 112, gate stacks 116 a, 116 b,and 116 c, as well as contact holes 130 a and 130 b. Semiconductordevice 100 may include other components not shown in figures herein.Semiconductor device 100's components are further described below.

Substrate 102 is a semiconductor substrate (e.g., a silicon wafer) inthe present embodiment. Alternatively, substrate 102 may compriseanother elementary semiconductor, such as germanium; a compoundsemiconductor including silicon carbide, gallium nitride, galliumarsenide, gallium phosphide, indium phosphide, indium arsenide, andindium antimonide; an alloy semiconductor including silicon germanium(SiGe), gallium arsenide phosphide, aluminum indium phosphide, aluminumgallium arsenide, gallium indium arsenide, gallium indium phosphide, andgallium indium arsenide phosphide; or combinations thereof. Substrate102 may be a semiconductor-on-insulator substrate, such as asilicon-on-insulator (SOI) substrate, a silicon germanium-on-insulator(SGOI) substrate, or a germanium-on-insulator (GOI) substrate.Semiconductor-on-insulator substrates can be fabricated using separationby implantation of oxygen (SIMOX), wafer bonding, and/or other suitablemethods. Substrate 102 can include various doped regions (not shown)depending on design requirements of semiconductor device 100. In someimplementations, substrate 102 includes p-type doped regions (forexample, p-type wells) doped with p-type dopants, such as boron, indium,other p-type dopant, or combinations thereof. In some implementations,substrate 102 includes n-type doped regions (for example, n-type wells)doped with n-type dopants, such as phosphorus, arsenic, other n-typedopant, or combinations thereof. In some implementations, substrate 102includes doped regions formed with a combination of p-type dopants andn-type dopants. The various doped regions can be formed directly onand/or in substrate 102, for example, providing a p-well structure, ann-well structure, a dual-well structure, a raised structure, orcombinations thereof. An ion implantation process, a diffusion process,and/or other suitable doping process can be performed to form thevarious doped regions in substrate 102.

S/D features 106 a and 106 b are disposed on substrate 102 and mayinclude n-type doped silicon for NFETs, p-type doped silicon germaniumfor PFETs, or other suitable materials. S/D features 106 a and 106 b maybe formed by etching depressions in active regions adjacent gate stacks116 a-116 c, and then epitaxially growing semiconductor materials in thedepressions. The epitaxially grown semiconductor materials may be dopedwith proper dopants in-situ or ex-situ. S/D features 106 a and 106 b mayhave any suitable shape and may be wholly or partially embedded in theactive region. For example, depending on the amount of epitaxial growth,S/D features 106 a and 106 b may rise above, at, or below the topsurface of a fin.

ILD layer 110 is disposed on substrate 102. ILD layer 110 may comprisetetraethylorthosilicate (TEOS) oxide, un-doped silicate glass, or dopedsilicon oxide such as borophosphosilicate glass (BPSG), fused silicaglass (FSG), phosphosilicate glass (PSG), boron doped silicon glass(BSG), and/or other suitable dielectric materials. ILD layer 110 may beformed by plasma enhanced chemical vapor deposition (PECVD), flowableCVD (FCVD), or other suitable methods.

Gate stacks 116 a-116 c may each include a gate dielectric layer at thebottom and a gate electrode layer disposed on the gate dielectric layer.The gate dielectric layer may include SiO₂ or a high-k dielectricmaterial such as hafnium silicon oxide (HfSiO), hafnium oxide (HfO₂),alumina (Al₂O₃), zirconium oxide (ZrO₂), lanthanum oxide (La₂O₃),titanium oxide (TiO₂), yttrium oxide (Y₂O₃), strontium titanate(SrTiO₃), or a combination thereof. The gate dielectric layer may bedeposited using CVD, physical vapor deposition (PVD), atomic layerdeposition (ALD), and/or other suitable methods. The gate electrodelayer of gate stack 116 a, 116 b, or 116 c may include polysiliconand/or one or more metal layers. For example, the gate electrode layermay include work function metal layer(s), conductive barrier layer(s),and metal fill layer(s). The work function metal layer may be a p-typeor an n-type work function layer depending on device type. The p-typework function layer may comprise titanium aluminum nitride (TiAlN),titanium nitride (TiN), tantalum nitride (TaN), ruthenium (Ru),molybdenum (Mo), tungsten (W), platinum (Pt), another suitable metal, orcombinations thereof. The n-type work function layer may comprisetitanium (Ti), aluminum (Al), tantalum carbide (TaC), tantalum carbidenitride (TaCN), tantalum silicon nitride (TaSiN), titanium aluminumnitride (TiAlN), titanium silicon nitride (TiSiN), another suitablemetal, or combinations thereof. The metal fill layer may includealuminum (Al), tungsten (W), cobalt (Co), and/or other suitablematerials. The gate electrode layer may be deposited using methods suchas CVD, PVD, plating, and/or other suitable processes. Gate stack 116 a,116 b, or 116 c may further include an interfacial layer under the gatedielectric layer. The interfacial layer may include a dielectricmaterial such as SiO₂ or SiON, and may be formed by chemical oxidation,thermal oxidation, ALD, CVD, and/or other suitable methods.

Each gate stack may be coupled to neighboring gate spacer 112. In someembodiments, gate spacer 112 is considered as a sidewall of itsneighboring gate stack. Each gate spacer 112 may be a single layer ormulti-layer structure. For example, gate spacer 112 may include adielectric material, such as silicon oxide, silicon nitride, siliconoxynitride, other dielectric material, or combination thereof. Gatespacer 112 may be formed by deposition (e.g., CVD or PVD) and etchingprocesses.

Gate stacks 116 a-116 c may be formed by any suitable processes such asa gate-first process and a gate-last process. In an example gate-firstprocess, various material layers are deposited and patterned to becomegate stacks 116 a-116 c before S/D features 106 a and 106 b are formed.In an example gate-last process (also called a gate replacementprocess), temporary gate structures (sometimes called “dummy” gates) areformed first. Then, after transistor S/D features 106 a and 106 b areformed, the temporary gate structures are removed and replaced with gatestacks 116 a-116 c. In the embodiment shown in FIG. 2A, gate stack 116a, 116 b, or 116 c may be disposed over a channel region of a transistorto function as a gate terminal. Although not shown in FIG. 2A, a metalplug may be disposed over and electrically coupled to such a gate stack,for example, to apply an adjustable voltage to the gate stack. Thevoltage may control a channel region between S/D features such as 106 aand 106 b.

As shown in FIG. 2A, contact hole 130 a is situated between gate stacks116 a and 116 b, while contact hole 130 b is situated between gatestacks 116 b and 116 c. Contact holes 130 a and 130 b expose topportions of S/D features 106 a and 106 b, respectively. Each contacthole comprises a sidewall surface 132 and a bottom surface 134, wherebottom surface 134 is effectively the same as the top surface of theunderlying S/D feature.

At operation 14, method 10 (FIG. 1) forms silicon nitride features onsidewall surfaces 132 of the contact holes. Still referring to FIG. 2A,silicon nitride features 142 a and 142 b are formed in contact hole 130a, while silicon nitride features 142 c and 142 d are formed in contacthole 130 b. The formation of silicon nitride features involves multiplesteps. In a first step, a silicon nitride layer is formed oversemiconductor device 100, for example, to cover at least contact holes130 a and 130 b, but may also cover the topmost surface of semiconductordevice 100. The silicon nitride layer may be formed by one or moremethods such as PECVD, ALD, and/or other suitable deposition ornitridation processes. For example, the silicon nitride layer may be athin layer with a generally conformal thickness across the top surfaceof semiconductor device 100. In addition to silicon nitride, this layermay comprise other suitable materials such as doping carbon. In someembodiments, multiple cycles of deposition may be executed in order toreach a target thickness of the silicon nitride layer. In a second step,the silicon nitride layer is selectively etched (e.g., using dry etchingassisted by a mask) to remove portions located on bottom surfaces 134and the topmost surface of ILD layer 110. As a result, silicon nitridefeatures 142 a-142 d remain on sidewall surfaces 132. Since the topsurfaces of S/D features 106 a and 106 b are to be exposed, theselective etching process is performed so as to etch the silicon nitridelayer portions located on bottom surface 134. Further, the selectiveetching process may also “thin” (remove a thickness portion of) siliconnitride features 142 a-142 d to open up more lateral space for the laterdeposition of contact plugs. In some embodiments, operation 14 iscontrolled to realize target dimensions (e.g., height and width) ofsilicon nitride features 142 a-142 d. The dimensions of silicon nitridefeatures 142 a-142 d may effectively control the dimensions of air gaps,which are formed by removing silicon nitride features 142 a-142 d(described below).

It should be noted that, since semiconductor device 100 is athree-dimensional structure (cross-sectional views of which are shownherein), silicon nitride features 142 a and 142 b may actually representthe same dummy feature, but they are labeled separately for clarity inthe cross-sectional views. The same consideration applies to otherlabels such as silicon nitride features 142 c and 142 d (as well as airgaps 150 a-150 d, and air gaps 150 c and 150 b, all described furtherbelow).

Method 10 then fills one or more conductive materials into contact holes130 a and 130 b to form first and second contact plugs, respectively.The contact plugs are labeled as 136 a and 136 b in FIG. 2F, but theirformation goes through several steps shown in FIGS. 2C-2F, since eachcontact plug includes a barrier layer 139 and a metal fill layer 141over and adjacent barrier layer 139, as shown in FIG. 2F.

Specifically, at operation 16, method 10 forms barrier layer 139 oversemiconductor device 100 (FIG. 2B). Barrier layer 139 covers at leastcontact holes 130 a and 130 b, but may also cover the topmost surface ofsemiconductor device 100, as shown in FIG. 2B. Barrier layer 139includes a metal nitride layer such as TaN or TiN. Barrier layer 139 maybe formed by PVD, CVD, ALD, plating, or other suitable methods. In anembodiment, an ALD process is used to uniformly deposit barrier layer139 over semiconductor device 100. Barrier layer 139 may help preventthe to-be-formed metal fill layer 141 from penetrating into surroundingsilicon or oxide regions. In some embodiments, barrier layer 139 alsoincludes a metal silicide layer under the metal nitride layer. Forinstance, method 10 first deposits a metal layer (using same metal asthe metal nitride layer, such as Ta or Ti), and then performs anannealing process at an elevated temperature. During annealing the metallayer reacts with semiconductor material(s) such as silicon in S/Dfeatures 106 a and 106 b to form the metal silicide layer thereon. Themetal silicide layer may include tantalum silicide, titanium silicide,or other suitable silicidation or germanosilicidation. The metalsilicide layer may cover a heavily doped region of S/D features 106 aand 106 b and in some cases may be considered part of S/D features 106 aand 106 b.

At operation 18, method 10 (FIG. 1) etches or “pulls back” barrier layer139 to partially expose silicon nitride features 142 a-142 d (FIG. 2C).Specifically, method 10 selectively removes portions of barrier layer139 that are disposed on the topmost surface of ILD layer 110 as well asthe upper sidewall section of contact holes 130 a and 130 b. A dry orwet etching process may be used. Enough of barrier layer 139 is removedso that top portions of silicon nitride features 142 a-142 d are exposedto the ambient environment.

At operation 20, method 10 (FIG. 1) performs a surface cleaning andtreatment procedure to clean and treat the surface of barrier layer 139as well as the exposed surfaces of silicon nitride features 142 a-142 d,in order to remove chemicals and residuals thereon (FIG. 2D). Surfacecleaning and treatment may be performed using any suitable methodsand/or materials. In an embodiment, deep cleaning is performed using asolution containing hydrochloric acid (HCl) and organic cleaning agents.As illustrated in FIG. 2D, the cleaning and treatment procedure may also“thin” an upper portion of barrier layer 139, leading to a taperedthickness profile for barrier layer 139 on sidewall surfaces 132. Thetapered thickness profile of barrier layer 139 causes its thickness togradually increase from top to bottom. For example, although barrierlayer 139 starts with a generally uniform thickness profile (FIG. 2C),after the cleaning and treatment procedure, barrier layer 139 may besignificantly thinner on its upper portion than its lower portion (FIG.2D). In some embodiments, the top surface of barrier layer 139 has athickness that is less than the bottom thickness of barrier layer 139(but still 50% or more (e.g., 60%, 70%) of the bottom thickness).

At operation 22, method 10 (FIG. 1) forms metal fill layer 141 oversemiconductor device 100 (FIG. 2E). Metal fill layer 141 may includecobalt (Co), tungsten (W), platinum (Pt), silver (Ag), nickel (Ni),copper (Cu), palladium (Pd), combinations thereof, or other suitablematerial. Metal fill layer 141 may be formed by PVD, CVD, ALD, plating,or other suitable methods. In some embodiments, a combination of PVD andCVD processes is used when depositing metal fill layer 141. For example,a PVD process may be used first to deposit a thin cobalt layer as a seedlayer (at slower deposition rate but with higher quality), and then aCVD process may be used to deposit a thick cobalt layer as a bulk layer(at faster deposition rate but perhaps not with same quality as cobaltseed layer). When depositing the seed layer, its thickness is controlledso that it does not block the deposition of the bulk layer in the bowingprofile region. As shown in FIG. 2E, metal fill layer 141 iselectrically coupled to S/D features 106 a and 106 b through barrierlayer 139.

At operation 24, method 10 (FIG. 1) planarizes metal fill layer 141using a chemical mechanical planarization (CMP) process, which removes atop portion of metal fill layer 141 (FIG. 2F). Each of contact plugs 136a and 136 b includes barrier layer 139 and metal fill layer 141, asshown in FIG. 2F. A contact plug is sometimes also called a via, a viaplug, a metal contact, or a metal plug. To facilitate the subsequentformation of air gaps, in some embodiments, the CMP process issufficiently long to ensure exposure of silicon nitride features 142a-142 d.

Following operation 24, air gaps can be formed using various approaches.FIGS. 3A-3C illustrate a first air gap formation approach, and FIGS.5A-5E illustrate a second air gap formation approach. Both approachesare described below, in order.

At operation 26, method 10 (FIG. 1) removes silicon nitride features 142a-142 d to form air gaps 150 a-150 d, respectively (FIG. 3A).Specifically, air gap 150 a is formed between contact plug 136 a andneighboring gate stack 116 a to reduce a first capacitance therebetween,air gap 150 b is formed between contact plug 136 a and neighboring gatestack 116 b to reduce a second capacitance therebetween, air gap 150 cis formed between contact plug 136 b and neighboring gate stack 116 b toreduce a third capacitance therebetween, and air gap 150 d is formedbetween contact plug 136 b and neighboring gate stack 116 c to reduce afourth capacitance therebetween. Capacitances are reduced because airhas a dielectric constant (k) of about one, which is lower than otherdielectric materials. In some embodiments (e.g., when there is nooverlay shift), air gaps 150 a-150 d have about the same dimensions, andthe first, second, third, and fourth capacitances are about equal. Butif there is overlay shift, air gaps 150 a-150 d may have differentdimensions, thereby leading to different corresponding capacitances.Unequal capacitances on two sides of contact plug 136 (136 a or 136 b)may impact related circuitry unequally, but since both the first andsecond capacitances are reduced herein, their overall impact oncircuitry is reduced.

It should be noted that method 10 disclosed herein forms air gaps 150a-150 d after forming contact plugs 136 a and 136 b. This differs fromconventional air gap formation approaches, which formed air gaps beforeforming their corresponding contact hole (and contact plug). Such achange in sequence is counter-intuitive, for example, because post-plugformation of air gaps brings unique etch selectivity considerations, andconventional approaches were unable to achieve such etch selectivity.But post-plug formation of air gaps, as disclosed herein, brings variousbenefits such as lowering the risk of short circuitry between gatestacks and neighboring S/D features when there is overlay shift. This inturn improves device reliability and enables higher breakdown voltage.Further, since the volume of air gaps is precisely controllable byadjusting heights and/or widths of silicon nitride features 142 a-142 d,the parasitic capacitance between gate stacks and contact plugs can beeffectively controlled. Optimal AC/DC gain may be achieved withoutpotential air gap damages. Further still, unlike conventional approacheswhere the top surfaces of air gaps were lower than gate stacks, air gaps150 a-150 d disclosed herein extend above the top surfaces of gatestacks 116 a-116 c. The taller air gaps 150 a-150 d help reduce fringecapacitance, which constitutes part of the parasitic capacitance. Forinstance, air gap 150 a reduces a fringe capacitance between the upperportion of contact plug 136 a and the upper portion of gate stack 116 a.As a result, the overall parasitic capacitance is further reducedbetween neighboring gate stacks and contact plugs.

In an embodiment, the material of silicon nitride features 142 a-142 dhas high etch selectivity with respect to barrier layer 139, ILD layer110, and metal fill layer 141 such that silicon nitride features 142a-142 d can be fully removed without substantially impacting othersurrounding layers. In an embodiment, silicon nitride features 142 a-142d are removable in an etching process at least 10 times (or 20 times, or50 times) faster than other materials in contact with silicon nitridefeatures 142 a-142 d. Such etch selectivity depends on the choices ofmaterials for silicon nitride features 142 a-142 d, barrier layer 139,ILD layer 110, and metal fill layer 141. Thus, the material makeup ofthese layers is considered in a combined fashion. In an embodiment,silicon nitride features 142 a-142 d include silicon nitride; barrierlayer 139 includes Ti and TiN; ILD layer 110 includes a low-k materialsuch as silicon oxide (SiO₂), silicon carbonitride (SiCN), and/orsilicon oxycarbide (SiCO); and metal fill layer 141 includes Co and/orW. The etch selectivity is based on different reactivity to the sameetchant.

The selective etching process at operation 26 may include dry etching,wet etching, reactive ion etching (RIE), and/or other suitableprocesses. In an embodiment, dry etching is used with afluorine-containing gas including sulfur hexafluoride (SF6), carbontetrafluoride (CF4), nitrogen trifluoride (NF3), selenium fluoride(SeF6), perfluoroethane (C2F6), perfluoropropane (C3F8), or anotherapplicable gas, or combinations thereof. Fluorine radicals may bediluted (e.g., between 1-5%) to help etch selectivity. In someembodiments, the flow rate of the fluorine-containing gas is in a rangefrom about 10 sccm to about 500 sccm. Dry etching effectively reachessilicon nitride sitting at the bottom of air gaps, which improves depthto width ratio of the air gaps. Alternatively, wet etching may be usedwith diluted hydrofluoric acid (DHF); potassium hydroxide (KOH)solution; ammonia; a solution containing hydrofluoric acid (HF), nitricacid (HNO₃), and/or acetic acid (CH₃COOH), or other suitable wetetchant.

At operation 28, method 10 (FIG. 1) seals air gaps 150 a-150 d byforming a capping layer or seal layer 152 (FIG. 3B) that covers air gaps150 a-150 d. Upon formation of seal layer 152, the volumes of air gaps150 a-150 d are finalized. As shown in FIG. 3B, seal layer 152interfaces air gaps 150 a-150 d at a height that is above the topsurfaces of gate stacks 116 a-116 c. The interface may be slightly lowerthan the top surface of ILD layer 110 because, during its formation,seal layer 152 penetrates slightly into air gaps 150 a-150 d (e.g., nogreater than 5 nm, say 1-5 nm). In some embodiments, air gaps 150 a-150d have very small width(s) (e.g., 1-5 nm) to reduce the risk of seallayer 152 penetrating deep into air gaps 150 a-150 d.

Seal layer 152 may be deposited using PVD, CVD, ALD, and/or othersuitable methods. In an embodiment, PVD is used because it can quicklydeposit an initial layer that blocks other materials from entering intoair gaps 150 a-150 d. As a result, air gaps 150 a-150 d can be taller.In another embodiment, ALD with a carbon-containing precursor is used.In an embodiment, seal layer 152 has a thickness between 2-7 nm. Seallayer 152 may use any suitable material as long as it allows fullenclosure of air gaps 150 a-150 d to prevent other materials fromgetting into air gaps 150 a-150 d. In an embodiment, seal layer 152 usessilicon, silicon oxide (SiO₂), silicon nitride (SiN), siliconcarbonitride (SiCN), silicon carbide (SiC), or combinations thereof.

At operation 30, method 10 (FIG. 1) forms two additionallayers—including a metal nitride layer 154 and an etch stop layer156—over seal layer 152 (FIG. 3C). Seal layer 152 and etch stop layer156 may both serve as middle contact etch stop layers (MCESLs), and inthis case, metal nitride layer 154 is sandwiched between the two etchstop layers to create an interleaving layers structure. In anembodiment, metal nitride layer 154 includes titanium nitride (TiN), andetch stop layer 156 includes silicon nitride (SiN) or another suitablematerial(s). Metal nitride layer 154 has relatively high resistivitycompared to metal and may be used to form resistors in semiconductordevice 100. Etch stop layer 156 facilitates further processes of method10 that are not elaborated herein. For example, another contact plug maybe formed over (and electrically connected) to contact plugs 136 a and136 b. Metal wires may be formed to interconnect upper plugs as well asother circuit features.

As described above, FIGS. 3A-3C (corresponding to operations 26, 28, and30 represent a first air gap formation approach. In comparison, FIGS.5A-5E illustrate a second air gap formation approach, which correspondsto method 40 shown in FIG. 4. Since many aspects of method 10 and method40 are the same, including operations 12-24, the same or similar aspectsare not repeatedly described in the interest of conciseness. Thedescription below focuses on aspects of method 40 that differs frommethod 10.

Method 40 begins with semiconductor device 100 that has gone throughoperation 24 as described above. Then, at operation 42, method 40 (FIG.4) removes upper portions of contact plugs 136 a and 136 b to create tworecesses in contact holes 130 a and 130 b, respectively (FIG. 5A).Specifically, the remaining portions of metal fill layer 141, as shownin FIG. 2F, are “etched back” to create the recesses. A small upperportion of barrier layer 139, as shown in FIG. 2F, may also be removed.The recesses are formed by a selective etching process, which may usedry etching, wet etching, RIE, and/or other suitable processes. Etchingconditions are tailored to keep a target thickness of contact plugs 136a and 136 b in order to facilitate the subsequent operation 44. In anembodiment, the recesses are at least 3 nm above top surfaces of gatestacks 116 a-116 c.

At operation 44, method 40 (FIG. 4) deposits a hard mask layer 160 overthe top surface of semiconductor device 100 (FIG. 5B). Hard mask layer160 may include any suitable material. In an embodiment, hard mask layer160 includes silicon, silicon carbonitride (SiCN), hafnium oxide (HfO₂),alumina (Al₂O₃), zirconium oxide (ZrO₂), or combinations thereof, oranother isolation material. Hard mask layer 160 may be formed by PVD,CVD, ALD, plating, or other suitable methods.

At operation 46, method 40 (FIG. 4) planarizes hard mask layer 160 usinga CMP process (FIG. 5C), which removes a top portion of hard mask layer160. To facilitate the subsequent formation of air gaps, in someembodiments, the CMP process is sufficiently long to ensure exposure ofsilicon nitride features 142 a-142 d. For example, the CMP process mayalso remove a top portion of ILD layer 110 to expose top surfaces ofsilicon nitride features 142 a-142 d. In an embodiment, between 2-5 nmof hard mask layer 160 remains after CMP. Collectively, operations 44and 46 form hard mask layer 160 that fills both recesses created byoperation 42 in contact holes 130 a and 130 b. Hard mask layer 160leaves top surfaces of silicon nitride features 142 a-142 d exposed.

At operation 48, method 40 (FIG. 4) removes silicon nitride features 142a-142 d to form air gaps 150 a-150 d, respectively (FIG. 5D).Characteristics of air gaps 150 a-150 d as described above with respectto method 10 would similarly apply here. However, in method 40 theheight of air gaps 150 a-150 d may be relatively smaller if a topportion of ILD layer 110 is removed in the CMP process of operation 46.Further, the selective etching process at operation 48 has high etchselectivity of silicon nitride features 142 a-142 d compared to barrierlayer 139, ILD layer 110, and hard mask layer 160 such that siliconnitride features 142 a-142 d can be fully removed without substantiallyimpacting other surrounding layers. Such etch selectivity nowadditionally depends on the choice of material for hard mask layer 160.

At operation 50, method 40 (FIG. 4) seals air gaps 150 a-150 d bydepositing a second ILD layer 170 (FIG. 5E) that covers air gaps 150a-150 d. ILD layer 170 is also a seal or capping layer. Upon formationof ILD layer 170, the volumes of air gaps 150 a-150 d are finalized. Asshown in FIG. 5E, ILD layer 170 interfaces air gaps 150 a-150 d at aheight that is above the top surfaces of gate stacks 116 a-116 c. Theinterface may be slightly lower than the top surface of ILD layer 110because, during its formation, ILD layer 170 penetrates slightly intoair gaps 150 a-150 d (e.g., for 1-5 nm). But the interface is stillhigher than the bottom surfaces of hard mask layer 160 (which correspondto top surfaces of contact plugs 136 a and 136 b, as shown in FIG. 5E).In some embodiments, air gaps 150 a-150 d have very small width(s)(e.g., 1-5 nm or even smaller such as 0.5 nm) to reduce the risk of ILDlayer 170 penetrating deep into air gaps 150 a-150 d.

ILD layer 170 may be deposited using PVD, CVD, ALD, and/or othersuitable methods. In an embodiment, PVD is used because it can quicklydeposit an initial layer that blocks other materials from entering intoair gaps 150 a-150 d. As a result, air gaps 150 a-150 d can be taller.In another embodiment, ALD with a carbon-containing precursor is used.ILD layer 170 may use any suitable material as long as it allows fullenclosure of air gaps 150 a-150 d to prevent other materials fromgetting into air gaps 150 a-150 d. In an embodiment, ILD layer 170includes silicon oxide (SiO₂).

Note that, although method 10 and method 40 lead to different structureson semiconductor device 100, many aspects of those structures may besimilar or identical. For instance, the plan view of part ofsemiconductor device 100 at a height below gate stacks 116 a-116 c wouldbe the same. FIG. 6 illustrates a partial plan view of semiconductordevice 100 at a height marked by line A-A′ in FIG. 3C and by line B-B′in FIG. 5E. FIG. 6 represents the same partial view for both FIG. 3C andFIG. 5E. Notably, air gap 150 b—which is disposed between contact plug136 a and gate stack 116 b—is near and aligned with contact plug 136 a.Indeed, air gap 150 b directly exposes the sidewall of contact plug 136a to air within air gap 150 b. Such air exposure helps heat dissipationwhen contact plug 136 a is conducting an electric current, since air hashigher thermal conductivity than other materials next to contact plug136 a. Note that the air within air gap 150 b may be atmospheric air orother suitable gas(es) (e.g., an inert gas) filled into air gap 150 b tofacilitate thermal conduction. On the other hand, air gap 150 b isrelatively far away from gate stack 116 b, as it is separated from gatestack 116 b by ILD layer 110 (and by spacer 112 when spacer 112 is notconsidered part of gate stack 116 b).

In both method 10 and method 40, each component may be formed withsuitable dimensions (e.g., thickness, height, depth, or width). Forexample, in an embodiment, as shown in FIG. 6, contact plug 136 a has awidth between 20-50 nm; barrier layer 139 on either side of contact plug136 a has a width between 1-2 nm; each of air gaps 150 a and 150 b has awidth between 1-5 nm.

Although not intended to be limiting, one or more embodiments of thepresent disclosure provide many benefits to a semiconductor device andthe formation thereof. Specifically, the timing change in the formationof air gaps leads to structural and positional changes of variouscomponents. For example, the air gap formation techniques disclosedherein realizes air gaps that extend above the top surfaces ofneighboring gate stacks. Therefore, parasitic capacitance between a gatestack and a contact plug can be effectively reduced. In addition, airgaps are aligned with contact plugs instead of gate stacks. Air gapsdirectly expose sidewalls of contact plugs to air, which helps heatdissipation when contact plugs conduct electric currents. Embodiments ofthe disclosed methods can be readily integrated into existingmanufacturing processes and technologies, such as middle end of line(MEoL) and back end of line (BEoL) processes.

In one exemplary aspect, the present disclosure provides a method forsemiconductor manufacturing comprising forming first and second siliconnitride features on sidewall surfaces of a contact hole, where thecontact hole is disposed in a dielectric layer and above a source/drain(S/D) feature. The method further comprises forming a contact plug inthe contact hole, the contact plug being electrically coupled to the S/Dfeature, removing a top portion of the contact plug to create a recessin the contact hole, forming a hard mask layer in the recess, andremoving the first and second silicon nitride features via selectiveetching to form first and second air gaps, respectively. In anembodiment, the first air gap is formed between the contact plug and thedielectric layer to reduce a first capacitance between the contact plugand a first neighboring gate stack. The second air gap is formed betweenthe contact plug and the dielectric layer to reduce a second capacitancebetween the contact plug and a second neighboring gate stack. In anembodiment, the first and second air gaps are formed such that thecontact plug is directly exposed to the first and second air gaps. In anembodiment, the dielectric layer is a first ILD layer, and the methodfurther comprises forming over the contact plug a second ILD layer thatcovers the first and second air gaps. In an embodiment, the second ILDlayer interfaces the first and second air gaps at a height that is abovetop surfaces of the first and second neighboring gate stacks. In anembodiment, the first and second air gaps are separated from the firstand second neighboring gate stacks, respectively, by at least the firstILD layer which includes a low-k material. In an embodiment, forming thehard mask layer in the recess comprises depositing the hard mask layer,and removing a top portion of the hard mask layer using a CMP process.The CMP process exposes top surfaces of the first and second siliconnitride features to facilitate the removal of the first and secondsilicon nitride features. In an embodiment, a remaining thickness of thehard mask layer in the recess after the CMP process is 2-5 nm, and therecess is at least 3 nm above a neighboring gate stack of the contactplug. In an embodiment, the contact plug comprises a barrier layer and ametal fill layer. Here, forming the contact plug comprises forming thebarrier layer between the first and second silicon nitride features,depositing the metal fill layer covering the barrier layer and thedielectric layer, and removing a top portion of the metal fill layerusing a CMP process. In an embodiment, the first and second siliconnitride features have etch selectivity such that the first and secondsilicon nitride features are removable at a rate at least 10 timesfaster than other materials in contact with the first and second siliconnitride features.

In another exemplary aspect, the present disclosure provides a methodcomprising providing a semiconductor device structure, which including asubstrate, first and second gate stacks on the substrate, first andsecond silicon nitride features between the first and second gatestacks, and a contact plug between, and in direct contact with, thefirst and second silicon nitride features. The method further comprisesetching the first and second silicon nitride features to form first andsecond air gaps, respectively, where the first and second air gapsexpose sidewalls of the contact plug to air within the first and secondair gaps. The method further comprises forming a seal layer over thecontact plug to cover the first and second air gaps. In an embodiment,the seal layer interfaces the first and second air gaps at a height thatis above top surfaces of the first and second gate stacks. In anembodiment, the seal layer is formed using a PVD process such that theseal layer interfaces the first and second air gaps at a height that isno greater than 5 nm below a top surface of the contact plug. In anembodiment, the first and second air gaps both have a width between 1-5nm. The first and second air gaps are separated from the first andsecond gate stacks, respectively, by at least an ILD layer that includesa low-k material.

In yet another exemplary aspect, the present disclosure provides asemiconductor device comprising a substrate, a source/drain (S/D)feature disposed on the substrate, a metal plug disposed over the S/Dfeature, a gate stack disposed adjacent the metal plug, an air gapdisposed between the metal plug and the gate stack, and a capping layerthat covers the air gap. The air gap at least partially exposes asidewall of the metal plug to air within the air gap. In an embodiment,an interface between the capping layer and the air gap is higher than atop surface of the gate stack. In an embodiment, the metal plugcomprises a barrier layer that includes a tapered thickness profile. Inan embodiment, the metal plug further comprises a metal fill layerdisposed above and adjacent the barrier layer, wherein the barrier layercomprises titanium nitride (TiN), and wherein the metal fill layercomprises tungsten (W) or cobalt (Co). In an embodiment, thesemiconductor device further comprises an ILD layer in direct contactwith the air gap, wherein the ILD layer comprises silicon oxide (SiO₂),silicon carbonitride (SiCN), silicon oxycarbide (SiCO), or combinationsthereof. In an embodiment, the semiconductor device further comprises ahard mask layer disposed between the metal plug and under the cappinglayer, wherein a bottom surface of the hard mask layer is higher than atop surface of the gate stack.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand the aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of theembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;a source/drain (S/D) feature disposed on the substrate; a metal plugdisposed over the S/D feature; a gate stack disposed adjacent the metalplug; a gap disposed between the metal plug and the gate stack, whereinthe gap at least partially exposes a sidewall of the metal plug the gap;and a capping layer that covers the gap.
 2. The semiconductor device ofclaim 1, wherein an interface between the capping layer and the gap ishigher than a top surface of the gate stack.
 3. The semiconductor deviceof claim 1, wherein the metal plug comprises a barrier layer thatincludes a tapered thickness profile.
 4. The semiconductor device ofclaim 3, wherein the metal plug further comprises a metal fill layerdisposed above and adjacent the barrier layer, wherein the barrier layercomprises titanium nitride (TiN), and wherein the metal fill layercomprises tungsten (W) or cobalt (Co).
 5. The semiconductor device ofclaim 1, further comprising: an interlayer dielectric (ILD) layerexposed in the gap, wherein the ILD layer comprises silicon oxide(SiO₂), silicon carbonitride (SiCN), silicon oxycarbide (SiCO), orcombinations thereof.
 6. The semiconductor device of claim 5, wherein acomposition of the ILD layer is the same as the capping layer.
 7. Thesemiconductor device of claim 1, further comprising a hard mask layerdisposed between the metal plug and under the capping layer, wherein abottom surface of the hard mask layer is higher than a top surface ofthe gate stack.
 8. The semiconductor device of claim 7, wherein the hardmask layer comprises silicon carbonitride, hafnium oxide, aluminumoxide, or zirconium oxide.
 9. The semiconductor device of claim 7,wherein the capping layer is in direct contact with sidewalls of thehard mask layer.
 10. A semiconductor device, comprising: a substrate; acontact plug disposed over the substrate; a gate stack disposed in aninterlayer dielectric (ILD) layer and adjacent the contact plug; a gapdisposed between the ILD layer and the contact plug; and a seal layerthat covers the gap.
 11. The semiconductor device of claim 10, whereinthe ILD layer is spaced apart from the contact plug by the gap and aportion of the seal layer.
 12. The semiconductor device of claim 10,wherein an interface between the seal layer and the gap is higher than atop surface of the gate stack.
 13. The semiconductor device of claim 10,wherein the contact plug comprises: a metal fill layer comprising cobalt(Co), tungsten (W), platinum (Pt), silver (Ag), nickel (Ni), copper(Cu), palladium (Pd); and a barrier layer disposed along a bottomsurface and sidewalls of the metal fill layer, wherein the barrier layercomprises tantalum nitride, titanium nitride, tantalum silicide, ortitanium silicide.
 14. The semiconductor device of claim 10, furthercomprising a hard mask layer disposed between the contact plug and theseal layer, wherein a bottom surface of the hard mask layer is higherthan a top surface of the gate stack.
 15. The semiconductor device ofclaim 14, wherein the hard mask layer comprises silicon carbonitride,hafnium oxide, aluminum oxide, or zirconium oxide.
 16. The semiconductordevice of claim 14, wherein the hard mask layer comprises siliconcarbonitride, hafnium oxide, aluminum oxide, or zirconium oxide.
 17. Thesemiconductor device of claim 14, wherein a portion of the seal layer isdisposed between the ILD layer and the hard mask layer.
 18. Asemiconductor device, comprising: a substrate; a source/drain (S/D)feature disposed on the substrate; a metal plug disposed over the S/Dfeature, wherein the metal plug comprises a metal fill layer and abarrier layer; a gate stack disposed adjacent the metal plug; a gapdisposed between the barrier layer and the gate stack, wherein the gapat least partially exposes a sidewall of the metal plug within the gap;a capping layer that covers the gap; and a hard mask layer disposedbetween the metal plug and capping layer.
 19. The semiconductor deviceof claim 18, wherein the hard mask layer comprises silicon carbonitride,hafnium oxide, aluminum oxide, or zirconium oxide.
 20. The semiconductordevice of claim 18, wherein the barrier layer that includes a taperedthickness profile.